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| SD4012 RF & MICROWAVE TRANSISTORS UHF COMMUNICATIONS APPLICATIONS Features * * * * * * * * 400 MHz 28 VOLTS POUT = 3 WATTS GP = 11.7 dB GAIN MINIMUM OVERLAY GEOMETRY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING REFRACTORY/GOLD METALIZATION DESCRIPTION: The SD4012 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for superior ruggedness. The SD4012 can withstand a 30:1 VSWR. Ideal for military communications applications in the 225 - 400 MHz frequency range, the SD4012 provides typically 13 dB gain with 60% collector efficiency. ABSOLUTE MAXIMUM RATINGS (Tcase = 25C) Symbol VCBO VCEO VEBO IC PDISS TJ TSTG Parameter Value 55 30 3.5 0.7 11 +200 -65 to+150 Unit V V V A W C C Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Thermal Data RTH(J-C) Thermal Resistance Junction-case 16.0 C/W 12-10-2002 SD4012 25 ELECTRICAL SPECIFICATIONS (Tcase = 25C) STATIC Symbol BVCBO BVEBO BVCES BVCEO ICBO HFE IC = 20 mA IE = 5 mA IC = 20 mA IC = 50 mA VCB = 30 V VCE = 5 V Test Conditions Min. IE = 0mA IC = 0 mA VBE = 0 V IB = 0 mA IE = 0 mA IC = 1 A 55 3.5 55 30 --10 Value Typ. ------------- Max. --------1 150 Unit V V V V mA --- DYNAMIC Symbol POUT C GP VSWR COB f = 400 MHz f = 400 MHz f = 400 MHz f = 400 MHz f = 1 MHz Test Conditions Min. PIN = 0.2 W PIN = 0.2 W PIN = 0.2 W PIN = 0.2 W VCB = 28V VCC = 28 V VCC = 28 V VCC = 28 V VCC = 28 V 3.0 --11.7 ----- Value Typ. ----------- Max. ------30:1 6 Unit W % dB W W IMPEDANCE DATA FREQ 300 MHz 325 MHz 350 MHz 375 MHz 400 MHz 425 MHz 450 MHz POUT = 3 W VCE = 28 V ZIN() ) 0.8 - j0.5 0.9 - j0.2 1.1 + j.25 1.5 + j.75 1.9 + j1.0 2.5 + j0.7 3.3 + j0.1 ZCL() ) 33.0 + j57.0 31.0 + j52.0 28.0 + j49.0 26.0 + j46.0 23.0 + j45.0 20.0 + j42.0 17.0 + j36.0 12-10-2002 SD4012 PACKAGE MECHANICAL DATA 12-10-2002 |
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